Defects in amorphous phase-change materials
نویسندگان
چکیده
منابع مشابه
Relation between bandgap and resistance drift in amorphous phase change materials
Memory based on phase change materials is currently the most promising candidate for bridging the gap in access time between memory and storage in traditional memory hierarchy. However, multilevel storage is still hindered by the so-called resistance drift commonly related to structural relaxation of the amorphous phase. Here, we present the temporal evolution of infrared spectra measured on am...
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*Correspondence: Martin Salinga, Institute of Physics (IA): Physics of New Materials, RWTH Aachen University, Sommerfeldstr. 14, Aachen 52074, Germany e-mail: martin.salinga@ physik.rwth-aachen.de The time evolution of the resistance of amorphous thin films of the phase change materials Ge2Sb2Te5, GeTe and AgIn-Sb2Te is measured during annealing at T = 80◦C. The annealing process is interrupted...
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ژورنال
عنوان ژورنال: Journal of Materials Research
سال: 2013
ISSN: 0884-2914,2044-5326
DOI: 10.1557/jmr.2013.72